Noise suppression in memory device sensing

ABSTRACT

NAND memory devices utilize sensing devices for sensing a programmed state of a nonvolatile memory cell or writing a data value to a nonvolatile memory cell. Latches in sensing devices are selectively coupled to a variable-potential node to receive a first potential to switch the latch, i.e., presetting, setting or resetting the latch. After switching, the variable-potential node may be set to an intermediate potential to increase noise immunity to the latch while holding the data value. In NAND sensing devices having a data latch and a cache latch, the variable-potential nodes of the data latch and the variable-potential nodes of the cache latch are coupled to separate ground control circuits. By independently varying the potentials applied to the variable-potential nodes of the data latch and cache latch, determined by whether the individual latch is switching or holding data, noise immunity in the data path is increased.

RELATED APPLICATION

This Application is a Continuation of U.S. application Ser. No.11/416,679 titled “NOISE SUPPRESSION IN MEMORY DEVICE SENSING,” filedMay 3, 2006, now U.S. Pat. No. 7,227,800, which is a Continuation ofU.S. application Ser. No. 10/932,963 filed Sep. 2, 2004, now U.S. Pat.No. 7,079,434 issued on Jul. 18, 2006, which is commonly assigned andincorporated herein by reference.

TECHNICAL FIELD OF THE INVENTION

The present invention relates generally to semiconductor memory devices,and in particular, the present invention relates to sensing and senseamplifiers in a NAND flash memory device.

BACKGROUND OF THE INVENTION

Semiconductor memory devices are rapidly-accessible memory devices. In asemiconductor memory device, the time required for storing andretrieving information generally is independent of the physical locationof the information within the memory device. Semiconductor memorydevices typically store information in a large array of cells. A groupof cells are electrically connected together by a bit line, or dataline. An electrical signal is used to program a cell or cells.

Computer, communication and industrial applications are driving thedemand for memory devices in a variety of electronic systems. Oneimportant form of semiconductor memory device includes a non-volatilememory made up of floating-gate memory cells called flash memory.Computer applications use flash memory to store BIOS firmware.Peripheral devices such as printers store fonts and forms on flashmemory. Digital cellular and wireless applications consume largequantities of flash memory and are continually pushing for lowervoltages and power demands. Portable applications such as digitalcameras, audio recorders, personal digital assistants (PDAs) and testequipment also use flash memory as a medium to store data.

Data values stored in memory cells are sensed in order to provide thedata to an external device, such as a processor or memory controller. Ina sensing operation, a read voltage is applied to a control gate of amemory cell and the cell is coupled to a sensing device. In a firststate, the memory cell will activate or become conductive. This is oftenreferred to as an erased state and often corresponds to a data valueof 1. In a second state, the memory cell will not activate in responseto the read voltage and will remain essentially nonconductive. This isoften referred to as a programmed state and often corresponds to a datavalue of 0. The differences in the states of the memory cell aredependent upon the nature of the cell, but generally result fromdifferences in threshold voltage (Vt) of a field-effect transistor. Oneexample includes the addition or removal of charge from a floating gateof a floating-gate memory cell or a trapping layer of an NROM cell.Another example includes the alteration of the remanent polarization ofa ferroelectric layer in a ferroelectric memory cell. Other nonvolatilememory cells are also known in the art whose data value is indicated bythe threshold voltage of a transistor.

In flash memory, and NAND flash memory in particular, sensed data islatched for page read-out. This latched data should store the data valuewhile data is transferring to an output pin of the device. Whenswitching an output buffer, however, ground noise and power noise isoften generated. This is especially true when the output data ischanging from one logic level to the other, e.g., high to low or low tohigh. Noise propagating to the internal circuits of the memory devicecan create malfunctions, leading to data errors or worse.

NAND sensing devices typically include two latches for holding senseddata, i.e., a data latch and a cache latch, because sensing times aretypically much longer than those seen with NOR memory. For example, NANDsensing times may be on the order of 10-20 μs while NOR sensing timesmay be on the order of 55-90 ns. Sensed data is latched in the datalatch and then passed to the cache latch. While reading data from thecache latch, the data latch can be used to latch a data value from thenext addressed memory page. In this manner, the relatively slow sensingtimes can be hidden from a user when reading several consecutive pages.

For the reasons stated above, and for other reasons stated below whichwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art foralternative sensing devices for integrated-circuit memory devices,memory devices containing such sensing devices, and methods of theiroperation.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified block diagram of a memory system, according to anembodiment of the invention.

FIG. 2 is a schematic of a NAND memory array, according to anotherembodiment of the invention.

FIG. 3 is a schematic of a portion of a memory device having sensingcircuitry in accordance with the invention.

FIG. 4 is a schematic of a sensing device in accordance with anembodiment of the invention.

FIGS. 5A-5B are block diagrams of ground control circuits for use withvarious embodiments of the invention.

FIGS. 6A-6B are signal traces associated with the ground controlcircuits of FIGS. 5A-5B, respectively.

FIG. 7 is a schematic of one ground control circuit in accordance withan embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description of the present embodiments,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration specific embodiments inwhich the inventions may be practiced. These embodiments are describedin sufficient detail to enable those skilled in the art to practice theinvention, and it is to be understood that other embodiments may beutilized and that process, electrical or mechanical changes may be madewithout departing from the scope of the present invention. The followingdetailed description is, therefore, not to be taken in a limiting sense,and the scope of the present invention is defined only by the appendedclaims and equivalents thereof.

Sensing circuitry in accordance with the various embodiments areadaptable for a variety of memory devices, including flash memorydevices and especially NAND flash memory devices.

FIG. 1 is a simplified block diagram of a memory system 100, accordingto an embodiment of the invention. Memory system 100 includes anintegrated circuit flash memory device 102, e.g., a NAND memory device,that includes an array of flash memory cells 104, an address decoder106, row access circuitry 108, column access circuitry 110, controlcircuitry 112, Input/Output (I/O) circuitry 114, and an address buffer116. Memory system 100 includes an external microprocessor 120, ormemory controller, electrically connected to memory device 102 formemory accessing as part of an electronic system. The memory device 102receives control signals from the processor 120 over a control link 122.The memory cells are used to store data that are accessed via a data(DQ) link 124. Address signals are received via an address link 126 thatare decoded at address decoder 106 to access the memory array 104.Address buffer circuit 116 latches the address signals. The memory cellsare accessed in response to the control signals and the address signals.It will be appreciated by those skilled in the art that additionalcircuitry and control signals can be provided, and that the memorydevice of FIG. 1 has been simplified to help focus on the invention.

FIG. 2 is a schematic of a NAND memory array 200 as a portion of memoryarray 104 in accordance with another embodiment of the invention. Asshown in FIG. 2, the memory array 200 includes word lines 202 ₁ to 202_(N) and intersecting local bit lines 204 ₁ to 204 _(M). For ease ofaddressing in the digital environment, the number of word lines 202 andthe number of bit lines 204 are each some power of two, e.g., 256 wordlines 202 by 4,096 bit lines 204. The local bit lines 204 are coupled toglobal bit lines (not shown) in a many-to-one relationship.

Memory array 200 includes NAND strings 206 ₁ to 206 _(M). Each NANDstring includes floating-gate transistors 208 ₁ to 208 _(N), eachlocated at an intersection of a word line 202 and a local bit line 204.The floating-gate transistors 208 represent non-volatile memory cellsfor storage of data. The floating-gate transistors 208 of each NANDstring 206 are connected in series source to drain between a sourceselect line 214 and a drain select line 215. Source select line 214includes a source select gate 210, e.g., a field-effect transistor(FET), at each intersection between a NAND string 206 and source selectline 214, and drain select line 215 includes a drain select gate 212,e.g., a field-effect transistor (FET), at each intersection between aNAND string 206 and drain select line 215. In this way, thefloating-gate transistors 208 of each NAND string 206 are connectedbetween a source select gate 210 and a drain select gate 212.

A source of each source select gate 210 is connected to a common sourceline 216. The drain of each source select gate 210 is connected to thesource of the first floating-gate transistor 208 of the correspondingNAND string 206. For example, the drain of source select gate 210 ₁ isconnected to the source of floating-gate transistor 208 ₁ of thecorresponding NAND string 206 ₁. Each source select gate 210 includes acontrol gate 220.

The drain of each drain select gate 212 is connected to the local bitline 204 for the corresponding NAND string at a drain contact 228. Forexample, the drain of drain select gate 212 ₁ is connected to the localbit line 204 ₁ for the corresponding NAND string 206 ₁ at drain contact228 ₁. The source of each drain select gate 212 is connected to thedrain of the last floating-gate transistor 208 _(N) of the correspondingNAND string 206. For example, the source of drain select gate 212 ₁ isconnected to the drain of floating-gate transistor 208 _(N) of thecorresponding NAND string 206 ₁.

Typical construction of floating-gate transistors 208 includes a source230 and a drain 232, a floating gate 234, and a control gate 236, asshown in FIG. 2. Floating-gate transistors 208 have their control gates236 coupled to a word line 202. A column of memory array 200 includes aNAND string 206 and the source and drain select gates connected thereto.A row of the floating-gate transistors 208 are those transistorscommonly coupled to a given word line 202.

FIG. 3 is a schematic of a portion of a memory device having a sensingcircuit in accordance with the invention. Because memory devicestypically contain millions, if not billions, of memory cells, it iscommon to have multiple layers of multiplexing in coupling a memory cellto a DQ line of the memory device. FIG. 3 demonstrates one example ofhow such multiplexing can be used to provide an indication of a datavalue of a target memory cell to an external device.

As shown in FIG. 3, a target memory cell 208 as part of a memory array200 is selectively coupled to a first multiplexer 302 through itsassociated local bit line 204, along with local bit lines 204 from anumber of other non-selected memory cells (not shown in FIG. 3). As oneexample, for a memory array 200 of the type depicted in FIG. 2, a targetmemory cell 208 would be selectively coupled to the first multiplexer302 upon activation of its word line 202 and an associated drain selectgate (not shown in FIG. 3). The first multiplexer 302 is configured toselect one of a plurality of local bit lines in response to an addressdecoder (not shown in FIG. 3) and couple it to an output, or global bitline, 304. It will be apparent that other memory array configurations,such as NOR configurations, are also suitable for use with theinvention.

The global bit line 304 is provided to a sensing device 306 inaccordance with an embodiment of the invention. The sensing device 306senses the data value of the target memory cell 208 and provides asignal indicative of its data value on its output 308. The output 308 ofsensing device 306 is then provided to a second multiplexer 310 alongwith other outputs 308 from other sensing devices (not shown in FIG. 3).The second multiplexer 310 is configured to select one of a plurality ofoutputs 308 in response to an address decoder (not shown in FIG. 3) andcouple it to an output driver 312 to place the data signal on the output314, such as a DQ line, of the memory device. Often, the output 308includes two data signals, i.e., the data value and its binarycomplement.

FIG. 4 is a schematic of a sensing device 306 for demonstrating noisesuppression using embodiments of the invention. Other sensing devicesare known and can benefit from the embodiments of the invention asdescribed herein. The sensing device 306 is selectively coupled to aglobal bit line 304 through a select transistor, such as an n-type fieldeffect transistor (nFET) 402. The select nFET 402 is responsive to acontrol signal received at node 404, which is coupled to the gate of thenFET 402. The sensing device 306 has a first latch or data latch 427 anda second latch or cache latch 459 that are isolated from one another.Passing of data values from one latch to the other is accomplished byutilizing the data value of one latch to selectively couple an input ofthe other latch to a potential node. Although the embodiment depicted inFIG. 4 utilizes ground potentials to pass the data value, it will beapparent that the same concepts could be used to pass the data valueusing selective coupling to supply potentials.

Sensing of the data value of a target memory cell is performed bycoupling the target memory cell to the global bit line 304 and couplingthe global bit line 304 to the gate of a transistor. The transistor ispreferably an nFET device, such as nFET 412 having its source coupled toa variable-potential node 414 for receiving a first potential duringswitching and for receiving an intermediate potential during a holdingperiod. For one embodiment, the first potential is a ground potential,e.g., Vss, and the intermediate potential is a supply potential, e.g.,Vcc, minus one Vt. For quick and accurate sensing, this device should berelatively strong compared to the devices forming latches of the sensingdevice 306. For one embodiment, the sensing nFET 412 has a W/L ratio of15/2. Precharging of the gate of sensing nFET 412 is provided throughp-type field effect transistor (pFET) 406 having a source coupled to asupply node 408 to receive a supply potential, such as Vcc, and a gatecoupled to receive a control signal at node 410.

The drain of the sensing nFET 412 is selectively coupled to a data latch427 through a sense enable switch, or nFET 416. For one embodiment, thedata latch 427 includes a pair of cross-coupled inverters 426 and 428with the input of inverter 428 coupled to the drain of nFET 416 and theoutput of inverter 426, and the output of inverter 428 coupled to theinput of inverter 426. The nFET 416 has its gate coupled to receive anenable signal at node 418.

A reset transistor, nFET 420, has a drain coupled to an input of theinverter 428, a source coupled to a variable-potential node 422 and agate coupled to receive a reset control signal at node 424. Thevariable-potential node 422 is coupled to receive the same potential asthe variable-potential node 414. A preset transistor, nFET 430, has adrain coupled to an input of the inverter 426, a source coupled to avariable-potential node 432 and a gate coupled to receive a presetcontrol signal at node 434. The variable-potential node 432 is coupledto receive the same potential as the variable-potential node 414.

The value latched in data latch 427 may be provided to cache latch 459by using it to selectively activate a transistor, such as nFET 436. Thisis desirable when reading a data value of the target memory cell toallow the data value to proceed to the DQ line 314 while a subsequenttarget memory cell is sensed. The nFET 436 has its gate coupled to theoutput of inverter 426, its source coupled to a variable-potential node438 and its drain selectively coupled to the cache latch 459 through apass transistor, such as nFET 440. Variable-potential node 438 iscoupled to receive a first potential during switching and to receive anintermediate potential during a holding period. For one embodiment, thefirst potential is a ground potential, e.g., Vss, and the intermediatepotential is a supply potential, e.g., Vcc, minus one Vt. While thevariable-potential node 438 may be coupled to receive the same potentiallevels as the variable-potential nodes 414, 422, 432 and 450, it willreceive its respective potential levels at different times as the datalatch 427 and cache latch 459 operate independently. The nFET 440 isresponsive to a control signal received at node 442.

For one embodiment, the cache latch 459 includes a pair of cross-coupledinverters 458 and 460 with the input of inverter 460 coupled to thedrain of nFET 440 and the output of inverter 458, and the output ofinverter 460 coupled to the input of inverter 458.

A reset transistor, nFET 452, has a drain coupled to an input of theinverter 460, a source coupled to a variable-potential node 454 and agate coupled to receive a reset control signal at node 456. Thevariable-potential node 454 is coupled to receive the same potential asthe variable-potential node 438. A preset transistor, nFET 462, has adrain coupled to an input of the inverter 458, a source coupled to avariable-potential node 464 and a gate coupled to receive a presetcontrol signal at node 466. The variable-potential node 464 is coupledto receive the same potential as the variable-potential node 438.

The value latched in cache latch 459 may be provided to a DQ line 314 ofthe memory device by coupling one or both outputs of the cross-coupledinverters 458 and 460 to a multiplexer 310, and providing the output ofthe multiplexer 310 to an output driver 312 coupled to the DQ line 314.Because cross-coupled inverters are typically configured using weakdevices, e.g., having a W/L ratio of perhaps 10/8, it is desirable tobuffer their outputs prior to providing them to the multiplexer 310. Forexample, inverters could be coupled between the outputs of the inverters458/460 and the multiplexer 310 to buffer them from the multiplexer 310.For one embodiment, only one output of the cache latch 459, e.g., theoutput of inverter 458 or the output of inverter 460, is provided tomultiplexer 310 as indicative of the data value.

The value latched in cache latch 459 may be provided to data latch 427by using it to selectively activate a transistor, such as nFET 448. Thisis desirable when writing a data value to a target memory cell. The nFET448 has its gate coupled to the output of inverter 458, its sourcecoupled to a variable-potential node 450 and its drain selectivelycoupled to the data latch 427 through a pass transistor, such as nFET444. The variable-potential node 450 is coupled to receive the samepotential as the variable-potential node 414. The nFET 444 is responsiveto a control signal received at node 446. Data Read

In a read operation, the data latch 427 is preset by activating presetnFET 430 while its associated variable-potential nodes, i.e., nodes 414,422, 432 and 450, are coupled to receive their first potentials. Thisforces the input of inverter 426 to a logic low and the input ofinverter 428 to a logic high by coupling the input of inverter 426 toreceive the ground potential at the variable-potential node 432. Atarget memory cell is coupled to its global bit line 304 and the gate ofthe sensing nFET 412 is precharged by activating pFET 406. Prechargingthe gate of the sensing nFET 412 will activate this transistor. Theprecharge transistor, pFET 406, may be left activated during sensing ifits transconductance is sufficiently below that of an activated targetmemory cell. Alternatively, the pFET 406 may be deactivated once thetarget memory cell is coupled to the sensing nFET 412 upon activatingthe select nFET 402.

If the target memory cell is non-conductive, e.g., programmed with afirst or logic low data value, the sensing nFET 412 will remainactivated. By activating the enable nFET 416, the data latch 427 is thencoupled to receive the ground potential at the variable-potential node414. This in turn will flip the data latch 427. Conversely, if thetarget memory cell is conductive, e.g., programmed with a second orlogic high data value, the sensing nFET 412 will turn off as theprecharge is drained from its gate by the conductance of the targetmemory cell through bit line 304. In this situation, when enable nFET416 is activated, the data latch 427 will remain at its preset state.

After sensing and latching the data value in data latch 427, thevariable-potential nodes 414, 422, 432 and 450 may be coupled to receivetheir intermediate potentials. As can be seen from the example of FIG.4, if the nodes 414, 422, 432 and 450 are coupled to receive anintermediate potential, such as Vcc-Vt, their associated nFETs 412, 420,430 and 444, respectively, will not activate unless noise on theircontrol gates reaches Vcc. Conversely, if the nodes 414, 422, 432 and450 were coupled to receive Vss, they could be activated if ground noiseon their control gates reached just one Vt. Thus, when these nFETs 412,420, 430 or 448 are intended to be off and have a ground potentialapplied at their control gates, immunity to ground noise is increasedwhen using the intermediate potential. The data value may be passed tothe cache latch 459 to allow a subsequent read operation to beperformed. To pass the data value to the cache latch 459, it is firstpreset by activating the preset nFET 462 while its associatedvariable-potential nodes 438, 454 and 464 are coupled to receive theirfirst potentials. This will force the input of inverter 458 to a logiclow and the input of inverter 460 to a logic high by coupling the inputof inverter 458 to the variable-potential node 464. After presetting thecache latch 459, the input of inverter 460 is coupled to the drain ofnFET 436 by activating pass nFET 440. If the output of inverter 426 is alogic high, nFET 436 will be activated, thus flipping the preset valueof the cache latch 459 by forcing the input of inverter 460 to a logiclow when it is coupled to the ground node 438. Conversely, if the outputof inverter 426 is a logic low, nFET 436 will be deactivated, leavingthe cache latch 459 in its preset state. Upon latching the data value inthe cache latch 459, it may be made available to the DQ line 314 and thevariable-potential nodes 438, 454 and 464 may be coupled to receivetheir intermediate potentials. As can be seen from the example of FIG.4, if the nodes 438, 454 and 464 are coupled to receive an intermediatepotential, such as Vcc-Vt, their associated nFETs 440, 452 and 462,respectively, will not activate unless noise on their control gatesreaches Vcc. Conversely, if the nodes 438, 454 and 464 were coupled toreceive Vss, they could be activated if ground noise on their controlgates reached just one Vt. Thus, when these nFETs 440, 452 and 462 areintended to be off and have a ground potential applied at their controlgates, immunity to ground noise is increased when using the intermediatepotential.

Data Write

In a write operation, the cache latch 459 may optionally be reset byactivating reset nFET 452 while its associated variable-potential nodes438, 454 and 464 are coupled to receive their first potentials. Thisforces the input of inverter 460 to a logic low and the input ofinverter 458 to a logic high by coupling the input of inverter 460 tothe variable-potential node 454. The data value desired to be written toa target memory cell may be written to the cache latch 459, such as byproviding a data signal to the input of inverter 458 or the input ofinverter 460. Similarly, a data signal could be provided to the input ofone of the inverters of cache latch 459 while the binary complement ofthe data signal is provided to the input of the other inverter of cachelatch 459. After latching the data value in the cache latch 459, thevariable-potential nodes 438, 454 and 464 may be coupled to receivetheir intermediate potentials.

Before passing the data value from the cache latch 459 to the data latch427, the data latch 427 is first reset by activating reset nFET 420while the variable-potential nodes 414, 422, 432 and 450 are coupled toreceive their first potentials. This forces the input of inverter 428 toa logic low and the input of inverter 426 to a logic high by couplingthe input of inverter 428 to the variable-potential node 422. Afterpresetting the data latch 427, the input of inverter 426 is coupled tothe drain of nFET 448 by activating pass nFET 444. If the output ofinverter 458 is a logic high, nFET 448 will be activated, thus flippingthe reset value of the data latch 427 by forcing the input of inverter426 to a logic low when it is coupled to the ground node 450.Conversely, if the output of inverter 458 is a logic low, nFET 448 willbe deactivated, leaving the data latch 427 in its reset state. Uponlatching the data value in the data latch 427, the variable-potentialnodes 414, 422, 432 and 450 may be coupled to receive their intermediatepotentials and the data value may be made available to the global bitline 304 for programming the target memory cell by activating enablenFET 416, precharge pFET 406 and select nFET 402. Also, upon latchingthe data value in the data latch 427, the cache latch 459 is availableto receive a subsequent data value for a subsequent read operation.

FIGS. 5A-5B are block schematics of ground control circuits for use ingenerating the variable potentials applied to the variable-potentialnodes of the sensing devices in accordance with embodiments of theinvention. Ground control circuit 570 a is associated with a firstlatch, such as the data latch, while ground control circuit 570 b isassociated with a second latch, such as the cache latch. The groundcontrol circuits 570 a and 570 b are adapted to provide the first andsecond, or intermediate, potentials to their variable-potential nodes.The first potential is preferably the ground potential Vss while thesecond potential is greater than the first potential and less than orequal to the supply potential Vcc. To avoid noise issues from the Vccrail, it is generally preferred to provide some margin between theintermediate potential and the supply potential. For one embodiment,this margin is chosen as one Vt less than the supply potential, which isconveniently generated as described with reference to FIG. 7.

In FIG. 5A, ground control circuit 570 a is coupled to receive a firstpotential, such as Vcc, at a supply potential node 572 a, and to receivea second potential, such as Vss, at a ground potential node 574 a. Theground control circuit 570 a is responsive to a control signal, such asdata latch ground control signal dl_gc, at node 576 a. The groundcontrol circuit 570 a generates an output potential, such as potentialvsa, at node 578 a. Node 578 a is coupled to each of thevariable-potential nodes associated with the data latch of itsassociated sensing device. For the example sensing device of FIG. 4,node 578 a is coupled to variable potential nodes 414, 422, 432 and 450.

In FIG. 5B, ground control circuit 570 b is coupled to receive a firstpotential, such as Vcc, at a supply potential node 572 b, and to receivea second potential, such as Vss, at a ground potential node 574 b. Theground control circuit 570 b is responsive to a control signal, such ascache latch ground control signal cl_gc, at node 576 b. The groundcontrol circuit 570 b generates an output potential, such as potentialvsb, at node 578 b. Node 578 b is coupled to each of thevariable-potential nodes associated with the cache latch of itsassociated sensing device. For the example sensing device of FIG. 4,node 578 b is coupled to variable potential nodes 438, 454 and 464.

FIGS. 6A-6B are signal traces demonstrating the operational timing ofthe ground control circuits 570 a and 570 b, respectively. In FIG. 6A,the control signal dl_gc is maintained at a first logic level, such asVcc, during a switching period of the data latch and is thentransitioned to a second logic level, such as 0V, during a holdingperiod of the data latch. In response to the control signal dl_gc, theoutput potential vsa goes from an initial potential, such as 0V, duringthe switching period of the data latch to a second potential, or theintermediate potential, such as Vcc-Vt, during the holding period of thedata latch. In FIG. 6B, the control signal cl_gc is maintained at afirst logic level, such as Vcc, during a switching period of the cachelatch and is then transitioned to a second logic level, such as 0V,during a holding period of the cache latch. In response to the controlsignal cl_gc, the output potential vsb goes from an initial potential,such as 0V, during the switching period of the cache latch to a secondpotential, or the intermediate potential, such as Vcc-Vt, during theholding period of the cache latch. While the signal traces appear thesame, it is noted that because the two latches operate independently andhave switching/holding periods at different times, the outputs of theground control circuits 570 a and 570 b will not necessarily be at thesame potential level.

FIG. 7 is a schematic of one ground control circuit 570 for use withembodiments of the invention. As shown in FIG. 7, the ground controlcircuit is responsive to a control signal, such as dl_gc or cl_gc,received at node 576 and has an output node 578 for providing the firstand intermediate potentials. The ground control circuit is coupled toreceive the first potential at node 572 and the second potential at node574. A pFET 580 has its control gate coupled to receive the controlsignal at node 576 and its source coupled to the potential node 572. Afirst nFET 582 has its gate and drain coupled to the drain of the pFET580 and its source coupled to the output node 578. A second nFET 584 hasits gate coupled to receive the control signal at node 576, its draincoupled to the output node 578 and its source coupled to the potentialnode 574. By applying a logic high to the node 576, the output node 578will receive a potential of one Vt less than the potential applied tothe potential node 572, e.g., Vcc-Vt. As described with reference toFIGS. 5A-5B, the output node 578 would be coupled to thevariable-potential nodes associated with a latch as described herein.While more than one ground control circuit could be used for each latch,a ground control circuit should not be used for more than one latch in agiven sensing device. While the schematic depicted in FIG. 7 representsone well-known circuit capable of producing a signal trace such asdepicted in FIGS. 6A-6B, those skilled in the art will recognize thatother circuits could be used to produce such signal traces.

CONCLUSION

Methods of sensing a programmed state of a nonvolatile memory cell, aswell as apparatus for carrying out the methods, have been describedherein for use in memory devices. Latches in sensing devices areselectively coupled to a variable-potential node to receive a firstpotential to switch the latch, i.e., presetting, setting or resettingthe latch. After switching, the variable-potential node may be set to anintermediate potential to increase noise immunity to the latch whileholding the data value. In NAND sensing devices having a data latch anda cache latch, the variable-potential nodes of the data latch and thevariable-potential nodes of the cache latch are coupled to separateground control circuits. By independently varying the potentials appliedto the variable-potential nodes of the data latch and cache latch,determined by whether the individual latch is switching or holding data,noise immunity in the data path is increased.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe invention will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the invention. It is manifestly intended that thisinvention be limited only by the following claims and equivalentsthereof.

1. A memory device, comprising: an array of memory cells; and a sensingdevice comprising two latches interposed between the array of memorycells and a driver circuit; wherein the memory device is adapted toperform a method of passing data between the latches of the sensingdevice, the method comprising: applying a first potential to first nodesassociated with switching a first latch of the sensing device during aswitching period of the first latch; applying a second potential to thefirst nodes during a holding period of the first latch, wherein thesecond potential is greater than the first potential and less than asupply potential; and passing a state of the first latch to a secondlatch of the sensing device during the holding period of the firstlatch.
 2. The memory device of claim 1, wherein the first potential is aground potential and the second potential is approximately one Vt lessthan the supply potential.
 3. The memory device of claim 1, wherein themethod further comprises: applying a third potential to second nodesassociated with switching the second latch during a switching period ofthe second latch and while passing the state of the first latch to thesecond latch; and applying a fourth potential to the second nodes duringa holding period of the second latch, wherein the fourth potential isgreater than the third potential and less than the supply potential. 4.The memory device of claim 3, wherein the third potential is a groundpotential and the fourth potential is approximately one Vt less than thesupply potential.
 5. The memory device of claim 3, wherein the thirdpotential is substantially equal to the first potential and the fourthpotential is substantially equal to the second potential.
 6. The memorydevice of claim 3, wherein, in the method, the holding period of thefirst latch is a different time period than the holding period of thesecond latch and the switching period of the first latch is a differenttime period than the switching period of the second latch.
 7. The memorydevice of claim 6, wherein, in the method, the holding periods of thefirst and second latches overlap.
 8. The memory device of claim 6,wherein, in the method, the switching periods of the first and secondlatches do not overlap.
 9. The memory device of claim 6, wherein, in themethod, the passing of the data occurs during one of a data read or adata write operation of the memory device.
 10. A memory device,comprising: an array of memory cells; and a sensing device for sensing adata value of a target memory cell of the array of memory cells, thesensing device comprising: a first latch for providing a first signal ata first node of the first latch and having a logic level indicative ofthe data value of the target memory cell, wherein the first latch isselectively coupled to one or more first variable-potential nodes forswitching the first latch; and a second latch for providing a secondsignal at a first node of the second latch and having a logic levelindicative of the data value, wherein the second latch is selectivelycoupled to one or more second variable-potential nodes for switching thesecond latch; a first ground control circuit coupled to receive a firstcontrol signal and to provide a variable potential to the firstvariable-potential nodes responsive to the first control signal; and asecond ground control circuit coupled to receive a second control signaland to provide a variable potential to the second variable-potentialnodes responsive to the second control signal.
 11. The memory device ofclaim 10, wherein each ground control circuit is coupled to receive theground potential and the supply potential, and to provide its variablepotential having either the ground potential or an intermediatepotential between the ground potential and the supply potential.
 12. Thememory device of claim 11, wherein the intermediate potential isapproximately one Vt less than the supply potential.
 13. The memorydevice of claim 10, wherein the first ground control circuit and thesecond ground control circuit are adapted to provide the same potentiallevels, but independently of each other.
 14. An electronic system,comprising: a processor; and a memory device coupled to the processor,wherein the memory device comprises: an array of memory cells; and asensing device for sensing a data value of a target memory cell of thearray of memory cells, the sensing device comprising: a first latch forproviding a first signal at a first node of the first latch and having alogic level indicative of the data value of the target memory cell,wherein the first latch is selectively coupled to one or more firstvariable-potential nodes for switching the first latch; and a secondlatch for providing a second signal at a first node of the second latchand having a logic level indicative of the data value, wherein thesecond latch is selectively coupled to one or more secondvariable-potential nodes for switching the second latch; a first groundcontrol circuit coupled to receive a first control signal and to providea variable potential to the first variable-potential nodes responsive tothe first control signal; and a second ground control circuit coupled toreceive a second control signal and to provide a variable potential tothe second variable-potential nodes responsive to the second controlsignal.
 15. The electronic system of claim 14, wherein each groundcontrol circuit is coupled to receive the ground potential and thesupply potential, and to provide its variable potential having eitherthe ground potential or an intermediate potential between the groundpotential and the supply potential.
 16. The electronic system of claim15, wherein the intermediate potential is approximately one Vt less thanthe supply potential.
 17. The electronic system of claim 14, wherein thefirst ground control circuit and the second ground control circuit areadapted to provide the same potential levels, but independently of eachother.
 18. An electronic system, comprising: a processor; and a memorydevice coupled to the processor, wherein the memory device comprises: anarray of memory cells; and a sensing device comprising two latchesinterposed between the array of memory cells and a driver circuit;wherein the memory device is adapted to perform a method of passing databetween the latches of the sensing device during either a data readoperation or a data write operation, the method comprising: applying afirst potential to first nodes associated with switching a first latchof the sensing device during a switching period of the first latch;applying a second potential to the first nodes during a holding periodof the first latch, wherein the second potential is greater than thefirst potential and less than a supply potential; and passing a state ofthe first latch to a second latch of the sensing device during theholding period of the first latch.
 19. The electronic system of claim18, wherein the first potential is a ground potential and the secondpotential is approximately one Vt less than the supply potential. 20.The electronic system of claim 18, wherein the method further comprises:applying a third potential to second nodes associated with switching thesecond latch during a switching period of the second latch and whilepassing the state of the first latch to the second latch; and applying afourth potential to the second nodes during a holding period of thesecond latch, wherein the fourth potential is greater than the thirdpotential and less than the supply potential.
 21. The electronic systemof claim 20, wherein the third potential is a ground potential and thefourth potential is approximately one Vt less than the supply potential.22. The electronic system of claim 20, wherein the third potential issubstantially equal to the first potential and the fourth potential issubstantially equal to the second potential.
 23. The electronic systemof claim 20, wherein, in the method, the holding period of the firstlatch is a different time period than the holding period of the secondlatch and the switching period of the first latch is a different timeperiod than the switching period of the second latch.
 24. The electronicsystem of claim 23, wherein, in the method, the holding periods of thefirst and second latches overlap.
 25. The electronic system of claim 23,wherein, in the method, the switching periods of the first and secondlatches do not overlap.
 26. The electronic system of claim 23, wherein,in the method, the passing of the data occurs during one of a data reador a data write operation of the memory device.